kw.\*:("Recombinación portador carga")
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Analytical model for the effective recombination velocity at an arbitrarily doped high-low junctionJANKOVIC, N. D; KARAMARKOVIC, J. P.IEE proceedings. Part I. Solid-state and electron devices. 1988, Vol 135, Num 5, pp 136-138, issn 0143-7100Article
Microstructure-dependent photoelectric properties in porphyrin LB filmsYONEYAMA, M; FUJII, A; MAEDA, S et al.Molecular crystals and liquid crystals (1991). 1992, Vol 216-8, pp 189-194, issn 1056-8816Conference Paper
Temperature dependence of luminescence lifetimes in quartz under pulsed blue light stimulationCHITHAMBO, M. L; GALLOWAY, R. B.Radiation effects and defects in solids. 2001, Vol 154, Num 3-4, pp 355-359, issn 1042-0150Conference Paper
Two-temperatures approximation theory of thermo-emf in bipolar semiconductorsGUREVICH, Yu. G; ORTIZ, A.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 6, issn 0022-3727, 065410.1-065410.6Article
Analytical model and qualitative analysis of the interface-trap charge pumping characteristics of MOS structureHABAS, P.International conference on microelectronic. 1997, pp 605-610, isbn 0-7803-3664-X, 2VolConference Paper
Determination of energy levels of recombination centers in low-doped Si layers by temperature dependence of recombination lifetimeSPIRITO, P; SANSEVERINO, A.Solid-state electronics. 1994, Vol 37, Num 7, pp 1429-1436, issn 0038-1101Article
Shallow level recombination current dominance in transistor betasLANYON, H. P. D.IEEE electron device letters. 1993, Vol 14, Num 2, pp 49-50, issn 0741-3106Article
Comment on EBIC contrast theory of dislocations : intrinsic recombination properties. ResponseDONOLATO, C; PASEMANN, L; FARVACQUE, J. L et al.Revue de physique appliquée. 1990, Vol 25, Num 11, pp 1107-1111, issn 0035-1687, 5 p.Article
Recombinaison des porteurs de charges dans un arséniure de gallium contenant des amas de défautsLOMAKO, V. M; STAROSTIN, P. YA.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 1, pp 90-95, issn 0015-3222Article
End region recombination and boundary determined current density in pin diodesMCGHEE, J; HENDERSON, I. A; SAFFARI, M et al.Solid-state electronics. 1987, Vol 30, Num 2, pp 241-242, issn 0038-1101Article
Recombination in highly injected siliconSINTON, R. A; SWANSON, R. M.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 6, pp 1380-1389, issn 0018-9383Article
Bistable Photoconduction in SemiconductorsLAGOMARSINO, Stefano.Optoelectronic devices and properties. 2011, pp 527-546, isbn 978-953-307-204-3, 1Vol, 20 p.Book Chapter
Some properties of luminescence lifetimes from quartz stimulated by blue lightCHITHAMBO, M. L; GALLOWAY, R. B.Radiation effects and defects in solids. 2001, Vol 154, Num 3-4, pp 361-365, issn 1042-0150Conference Paper
Rigorous modeling of recombination under double injection in amorphous films : An example of the stiff problemSCHAUER, F; WEITER, M.The Journal of imaging science and technology. 1999, Vol 43, Num 5, pp 413-419, issn 1062-3701Article
Identification of electron-hole transitions in short-period GaAs/AlAs superlattices by time-resolved photoluminescenceLITOVCHENKO, V. G; KORBUTYAK, D. V; KRYLYUK, S. G et al.SPIE proceedings series. 1998, pp 182-186, isbn 0-8194-2808-6Conference Paper
Delta doping superlattices in siliconZEINDL, H. P; HAMMERL, E; KIUNKE, W et al.Journal of electronic materials. 1990, Vol 19, Num 10, pp 1119-1122, issn 0361-5235Article
Effect of anisotropy and warping on the Auger lifetime of direct gap semiconductorsCOMBESCOT, M; COMBESCOT, R.Solid state communications. 1987, Vol 61, Num 12, pp 821-823, issn 0038-1098Article
The optimization of relative current sensitivity of bipolar magnetotransistorKOZLOV, A. V; REVELEVA, M. A; TIKHONOV, R. D et al.SPIE proceedings series. 2004, pp 362-368, isbn 0-8194-5324-2, 7 p.Conference Paper
Nonlinear transformation of light-modulation signal in the case of quadratic recombination in a photodetectorMALYSHEV, V. A; SAPELKIN, S. V; CHERVYAKOV, G. G et al.Semiconductors (Woodbury, N.Y.). 1993, Vol 27, Num 1, pp 97-98, issn 1063-7826Article
Exact formula for energy-independent recombination heatingLEO, K.Physica status solidi. B. Basic research. 1988, Vol 145, Num 1, pp K31-K33, issn 0370-1972Article
Recombination-enhanced transformation of deep centers in red light-emitting AlGaAs diodesTORCHINSKAYA, T. V; SHMATOV, A. A; SHEINKMAN, M. K et al.Physica status solidi. A. Applied research. 1988, Vol 110, Num 1, pp 213-220, issn 0031-8965Article
Multiphonon capture in the case of undistorted defectsBOURGOIN, J. C.Physical review. B, Condensed matter. 1988, Vol 38, Num 18, pp 13472-13473, issn 0163-1829Article
A tunable, current-controlled, ligt-emitting diodeMANIFACIER, J. C; MOREAU, Y; HENISCH, H. K et al.Solid-state electronics. 1987, Vol 30, Num 3, pp 354-357, issn 0038-1101Article
Models of organic light-emitting diodesBÄSSLER, H; TAK, Y. H; KHRAMTCHENKOV, D. V et al.Synthetic metals. 1997, Vol 91, Num 1-3, pp 173-179, issn 0379-6779Conference Paper
The recombination-induced temperature change of non-equilibrium charge carriersBIMBERG, D; MYCIELSKI, J.Journal of physics. C. Solid state physics. 1986, Vol 19, Num 13, pp 2363-2373, issn 0022-3719Article